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Spatial Atomic Layer Deposition

SALD Technology

What is Spatial Atomic Layer Deposition?

Spatial Atomic Layer Deposition (Spatial ALD) delivers a form-following high-quality coating at the atomic level. Compared with conventional ALD, this ingenious technology stacks atomic layers many times faster.

Highest throughput and coating quality at the lowest costs are the key added values Spatial ALD brings. Our in-depth expertise in Spatial ALD technology, combined with our unique ability to swiftly transfer your application from lab to fab, offers you exciting and groundbreaking opportunities in today’s growth markets.

  • Maximum throughput
  • Lowest costs
  • Efficient use of material
  • Highest quality coatings
  • Roll-to-roll and sheet-to-sheet compatible
  • Continuous atmospheric process

The differences

Temporal ALD vs Spatial ALD

Temporal ALD

  • High-quality 3D layers and suitable for porous substrates.
  • Limited deposition speed
  • Parasitic backside deposition
  • Batch process
  • Vacuum chamber and pumps needed
  • High cost per substrate

Spatial ALD

  • High-quality 3D layers and suitable for porous substrates.
  • 100-300 times faster deposition speed by our spatial technology in combination with plasma enhanced deposition
  • Continuous S2S and R2R process
  • Atmospheric pressure deposition
  • Scalable to large areas & flexible substrates
  • Industrially proven, cost-efficient mass production.

SALD Technology

How does Spatial Atomic Layer Deposition operate?

Atmospheric pressure Spatial ALD operates by simultaneously delivering precursor and co-reactant gases spatially separated by a gas curtain onto a substrate which moves through the different gas zones. In the gas zones the gasses react on the substrate surface in a self-limiting manner. This unique self-limited growth mechanism ensures precise control over film thickness and composition making Spatial ALD ideal for (large scale) industrial applications requiring uniform coatings on complex substrates. We have developed the deposition technology making it compatible with sheet-to-sheet (S2S) and roll-to-roll (R2R) processing.

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FAQ

Atomic Layer Deposition

ALD: In ALD, precursor gases are sequentially pulsed into a reaction chamber, where they react with the substrate surface in a self-limiting manner, forming a monolayer of material.
Spatial ALD, utilizes spatial separation of precursor sources and substrate, allowing for simultaneous exposure of the substrate to multiple precursor gases without the need for sequential pulsing.

Higher throughput and scalability. Spatial ALD is potentially more scalable for large-area coating applications due to its higher throughput and simple integration in production lines.

By eliminating the need for sequential pulsing, a time-intensive process, Spatial ALD reduces cycle times for deposition leading to higher throughput. For example, for ALD of Al2O3 the deposition rate can increase from 100-300 nm per hour to 60 nm per minute when employing Spatial ALD.

Yes, Spatial ALD allows for the growth of complex multi-component materials by either co-dosing or super cycling the different precursors.

Erik Kremers

CTO

erik.kremers@spatialald.com

+31 6 22 43 86 81

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